IRF6100PBF
International Rectifier Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PBGA-B4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2.2
- Drain Current-Max (ID) (A)5.1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.065
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IRF6100PBF