INFINEON TECHNOLOGIES AG IRF5M3710SCV | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRF5M3710SCV

生命周期状态
Active
说明
Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-XSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
35
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
127
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
340
Turn-off Time-Max (toff) (ns)
135
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
350
Pulsed Drain Current-Max (IDM) (A)
140
Drain-source On Resistance-Max (ohm)
0.03