International Rectifier Corporation IRF5803PBF | 搜芯易Sourcengine

International Rectifier Corporation IRF5803PBF

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-193AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
3.4
Moisture Sensitivity Level
2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
27
Drain-source On Resistance-Max (ohm)
0.112
Time@Peak Reflow Temperature-Max (s)
30