International Rectifier Corporation IRF240PBF | 搜芯易Sourcengine

International Rectifier Corporation IRF240PBF

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-204AE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
18
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
172
DS Breakdown Voltage-Min (V)
200
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
125
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
125
Avalanche Energy Rating (Eas) (mJ)
450
Pulsed Drain Current-Max (IDM) (A)
72
Drain-source On Resistance-Max (ohm)
0.21
Time@Peak Reflow Temperature-Max (s)
40