- 生命周期状态Active
- 说明Power Field-Effect Transistor, 24A I(D), 100V, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)24
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
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