IR-H004J
SHARP CORPORATION
- 生命周期状态Discontinued
- 说明RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Power Gain-Min (Gp) (dB)9
- Drain Current-Max (ID) (A)0.08
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)2.9
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