INFINEON TECHNOLOGIES AG IPTG025N08NM5 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPTG025N08NM5

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 184A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
167
Drain Current-Max (ID) (A)
184
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
80
Feedback Cap-Max (Crss) (pF)
63
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
124
Pulsed Drain Current-Max (IDM) (A)
736
Drain-source On Resistance-Max (ohm)
0.0025
Screening Level / Reference Standard
IEC-61249-2-21; IEC-68-1