INFINEON TECHNOLOGIES AG IPS60R650CEAKMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPS60R650CEAKMA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Trans MOSFET N 650V 9.9A 3-Pin TO-251 Tube
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
82
Drain Current-Max (ID) (A)
9.9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Avalanche Energy Rating (Eas) (mJ)
133
Pulsed Drain Current-Max (IDM) (A)
19
Drain-source On Resistance-Max (ohm)
0.65