INFINEON TECHNOLOGIES AG IPP028N08N3GXKSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPP028N08N3GXKSA1

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Single N-Channel 80 V 2.8 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
TO-220-3 (TO-220AB)
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
100
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
80
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
1430
Pulsed Drain Current-Max (IDM) (A)
400
Drain-source On Resistance-Max (ohm)
0.0028