INFINEON TECHNOLOGIES AG IPN50R650CE | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPN50R650CE

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 9A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
SUPERJUNCTION MOSFET
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
5
Drain Current-Max (ID) (A)
9
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Avalanche Energy Rating (Eas) (mJ)
102
Pulsed Drain Current-Max (IDM) (A)
19
Drain-source On Resistance-Max (ohm)
0.65
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED