INFINEON TECHNOLOGIES AG IPL65R190E6 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPL65R190E6

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PSSO-N4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
650
Avalanche Energy Rating (Eas) (mJ)
485
Pulsed Drain Current-Max (IDM) (A)
66
Drain-source On Resistance-Max (ohm)
0.19