INFINEON TECHNOLOGIES AG IPI90N06S4L04AKSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPI90N06S4L04AKSA1

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 60V 90A TO262-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
90
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
331
Pulsed Drain Current-Max (IDM) (A)
360
Drain-source On Resistance-Max (ohm)
0.0034
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED