INFINEON TECHNOLOGIES AG IPI120N08S403AKSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPI120N08S403AKSA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH 80V 120A TO262-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Additional Feature
GREEN
Number of Elements
1
Reference Standard
AEC-Q101
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
120 A
DS Breakdown Voltage-Min
80 V
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
920 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.0028 ohm
Pulsed Drain Current-Max (IDM)
480 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED