INFINEON TECHNOLOGIES AG IPI041N12N3GAKSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPI041N12N3GAKSA1

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
120
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
120
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
900
Pulsed Drain Current-Max (IDM) (A)
480
Drain-source On Resistance-Max (ohm)
0.0041