INFINEON TECHNOLOGIES AG IPG20N06S415ATMA2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPG20N06S415ATMA2

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F8
Configuration
2 N-Channel (Dual)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
20
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Avalanche Energy Rating (Eas) (mJ)
90
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.0155