INFINEON TECHNOLOGIES AG IPDD60R150G7XTMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPDD60R150G7XTMA1

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IPDD60R150G7XTMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 16A 10-Pin HDSOP EP T/R - Arrow.com
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G10
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
10
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
95
Drain Current-Max (ID) (A)
16
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
53
Pulsed Drain Current-Max (IDM) (A)
45
Drain-source On Resistance-Max (ohm)
0.15