INFINEON TECHNOLOGIES AG IPD50R380CEATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPD50R380CEATMA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH 500V 14.1A TO252-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
500 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
173 mJ
Drain-source On Resistance-Max
0.38 ohm
Pulsed Drain Current-Max (IDM)
32.4 A