INFINEON TECHNOLOGIES AG IPD50N06S4-09 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPD50N06S4-09

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power transistor, IPD50N06S4-09, INFINEON Features N-channel - enhancement mode AEC qualified MSL1 up to 260 °C peak reflow 175 °C operating temperature Green product (RoHS compliant) Applications Valves control Solenoids control Lighting Single-ended motors
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
71
Drain Current-Max (ID) (A)
50
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
87
Pulsed Drain Current-Max (IDM) (A)
200
Drain-source On Resistance-Max (ohm)
0.009
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED