INFINEON TECHNOLOGIES AG IPD20N03L | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPD20N03L

生命周期状态
EOL
说明
MOSFET N-CH 30V 30A TO252-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
30 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
175 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
42 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
15 mJ
Peak Reflow Temperature (Cel)
255
Drain-source On Resistance-Max
0.031 ohm
Pulsed Drain Current-Max (IDM)
120 A