INFINEON TECHNOLOGIES AG IPD06P007NATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPD06P007NATMA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET P-CH 60V 4.3A TO252-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
19
Drain Current-Max (ID) (A)
4.3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
12
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
43
Pulsed Drain Current-Max (IDM) (A)
17.2
Drain-source On Resistance-Max (ohm)
0.4
Screening Level / Reference Standard
IEC-68-1; IEC-61249-2-21