INFINEON TECHNOLOGIES AG IPD04N03LAG | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPD04N03LAG

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 25V 50A TO252-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
115
Drain Current-Max (ID) (A)
50
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
600
Pulsed Drain Current-Max (IDM) (A)
350
Drain-source On Resistance-Max (ohm)
0.0057