INFINEON TECHNOLOGIES AG IPC26N12NX2SA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPC26N12NX2SA1

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
MOSFET N-CH 120V SAWN WAFER
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XXUC-N
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UNSPECIFIED
Number of Elements
1
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
120
Drain-source On Resistance-Max (ohm)
0.1