INFINEON TECHNOLOGIES AG IPB80N06S2H5ATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPB80N06S2H5ATMA1

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
MOSFET N-CH 55V 80A TO263-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
80
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Avalanche Energy Rating (Eas) (mJ)
700
Pulsed Drain Current-Max (IDM) (A)
320
Drain-source On Resistance-Max (ohm)
0.0052