INFINEON TECHNOLOGIES AG IPB60R230P6ATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPB60R230P6ATMA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH 600V 16.8A TO263-3
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
352
Pulsed Drain Current-Max (IDM) (A)
48
Drain-source On Resistance-Max (ohm)
0.23