INFINEON TECHNOLOGIES AG IPB160N04S402DXTMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPB160N04S402DXTMA1

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 160A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
160
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Avalanche Energy Rating (Eas) (mJ)
220
Pulsed Drain Current-Max (IDM) (A)
640
Drain-source On Resistance-Max (ohm)
0.0019
Screening Level / Reference Standard
AEC-Q101