INFINEON TECHNOLOGIES AG IPB144N12N3GATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IPB144N12N3GATMA1

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 120V 56A 3-Pin(2+Tab) D2PAK T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
TO-263-3 (D2PAK)
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
56
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
120
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
90
Pulsed Drain Current-Max (IDM) (A)
224
Drain-source On Resistance-Max (ohm)
0.0144