IPB096N03LG
INFINEON TECHNOLOGIES AG
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明N-CHANNEL POWER MOSFET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)42
- Drain Current-Max (ID) (A)35
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)245
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)40
- Pulsed Drain Current-Max (IDM) (A)245
- Drain-source On Resistance-Max (ohm)0.0141
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IPB096N03LG