IMS2600N-150M
INMOS
- 生命周期状态Transferred
- 说明Page Mode DRAM, 64KX1, 150ns, MOS, CQCC18
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeSEPARATE
- TechnologyMOS
- JESD-30 CodeR-XQCC-N18
- Memory Width1
- Organization64KX1
- Package CodeQCCN
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory Density65536 bit
- Memory IC TypePAGE MODE DRAM
- Refresh Cycles256
- Terminal Pitch1.27 mm
- Access Time-Max150 ns
- Number of Words65536 words
- Screening Level38535Q/M;38534H;883B
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeOTHER
- Terminal PositionQUAD
- Supply Current-Max75 mA
- Number of Terminals18
- Number of Words Code64K
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC
- Output Characteristics3-STATE
- Package Equivalence CodeLCC18,.3X.43
- Operating Temperature-Max110 Cel
- Operating Temperature-Min-55 Cel
- Supply Voltage-Nom (Vsup)5 V
IMS2600N-150M有0家供应商货源可供购买或竞价
提交询价
提交询价 您的询价单将直接发送给我们的销售专家: Pari
提交询价
IMS2600N-150M
提交询价
IMS2600N-150M