IM2G04D2DBBG-18H
INTELLIGENT MEMORY LTD
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明DDR2 DRAM, 512MX4, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width10.5 mm
- Length11.5 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B60
- Memory Width4
- Organization512MX4
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density2147483648 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words536870912 words
- Seated Height-Max1.2 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals60
- Number of Words Code512M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max105 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IM2G04D2DBBG-18H