INFINEON TECHNOLOGIES AG IKP40N65H5 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKP40N65H5

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
INSULATED GATE BIPOLAR TRANSISTO
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2.1
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
32
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
217
Collector Current-Max (IC) (A)
74
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
4.8
Collector-emitter Voltage-Max (V)
650