INFINEON TECHNOLOGIES AG IKP01N120H2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKP01N120H2

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 3.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
28
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
20.9
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
493
Collector Current-Max (IC) (A)
3.2
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
3.9
Collector-emitter Voltage-Max (V)
1200