INFINEON TECHNOLOGIES AG IKD15N60RC2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKD15N60RC2

生命周期状态
Active
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

J-STD-609 Code
e3
VCEsat-Max (V)
2.3
Terminal Finish
Tin (Sn)
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
115.4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
35
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
414
Collector Current-Max (IC) (A)
28
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
5.7
Collector-emitter Voltage-Max (V)
600