INFINEON TECHNOLOGIES AG IKD08N65ET6 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKD08N65ET6

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 15A I(C), 650V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
1.9
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
47
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
30
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
147
Collector Current-Max (IC) (A)
15
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
650