INFINEON TECHNOLOGIES AG IKD06N60RFATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKD06N60RFATMA1

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 600V 12A 100W 3-Pin(2+Tab) DPAK T/R
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
YES
J-STD-609 Code
e3
Terminal Finish
Tin (Sn)
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
100
Moisture Sensitivity Level
1
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
12
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
5.7
Collector-emitter Voltage-Max (V)
600