INFINEON TECHNOLOGIES AG IKD03N60RFATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKD03N60RFATMA1

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 600V 5A 53.6W 3-Pin(2+Tab) DPAK T/R
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
18
Turn-off Time-Nom (toff) (ns)
265
Collector Current-Max (IC) (A)
5
Collector-emitter Voltage-Max (V)
600