INFINEON TECHNOLOGIES AG IKB20N65EH5ATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKB20N65EH5ATMA1

生命周期状态
Active
RoHS
符合RoHS标准
说明
TRENCHSTOP 5 High speed switching IGBT
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
2.1
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
125
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
40
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
183
Collector Current-Max (IC) (A)
38
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
4.8
Collector-emitter Voltage-Max (V)
650