INFINEON TECHNOLOGIES AG IKB03N120H2ATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKB03N120H2ATMA1

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 1200V 9.6A 62.5W 3-Pin(2+Tab) D2PAK T/R
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
16.1
Turn-off Time-Nom (toff) (ns)
403
Collector Current-Max (IC) (A)
9.6
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200