INFINEON TECHNOLOGIES AG IKA08N65F5XKSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IKA08N65F5XKSA1

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans IGBT Chip N-CH 650V 10.8A 31.2W 3-Pin(3+Tab) TO-220FP Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
Single
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
VCEsat-Max (V)
2.1
Case Connection
ISOLATED
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
31.2
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
15
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
163
Collector Current-Max (IC) (A)
10.8
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
4.8
Collector-emitter Voltage-Max (V)
650