INFINEON TECHNOLOGIES AG IHW30N100R | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IHW30N100R

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT 1000V 60A 412W TO247-3
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AC
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
988.4 ns
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
412 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.4 V
Collector-emitter Voltage-Max
1000 V