INFINEON TECHNOLOGIES AG IHD10N60RA | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IHD10N60RA

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT 600V 20A 110W TO252-3
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
355 ns
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
20 A
Moisture Sensitivity Level
3
Power Dissipation-Max (Abs)
110 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.7 V
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
260