INFINEON TECHNOLOGIES AG IGP10N60THKSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IGP10N60THKSA1

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 600V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Polarity/Channel Type
N-Channel
Turn-on Time-Nom (ton)
20 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
253 ns
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-40 Cel
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.7 V
Collector-emitter Voltage-Max
600 V