INFINEON TECHNOLOGIES AG IGP01N120H2HKSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IGP01N120H2HKSA1

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
Collector Current-Max (IC)
3.2 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V