INTEGRA TECHNOLOGIES INC IGN1012S40 | 搜芯易Sourcengine

INTEGRA TECHNOLOGIES INC IGN1012S40

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Power Gain-Min (Gp)
21.3 dB
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3.6 A
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
150 V
Operating Temperature-Max
200 Cel
Operating Temperature-Min
-55 Cel
Transistor Element Material
GALLIUM NITRIDE