INTEGRA TECHNOLOGIES INC IGN1011L70 | 搜芯易Sourcengine

INTEGRA TECHNOLOGIES INC IGN1011L70

生命周期状态
Active
RoHS
符合RoHS标准
说明
GAN, RF POWER TRANSISTOR, L-BAND
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
21.5
Drain Current-Max (ID) (A)
5.4
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
150
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-55