INFINEON TECHNOLOGIES AG IGD01N120H2BUMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IGD01N120H2BUMA1

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 1200V 3.2A 28W 3-Pin(2+Tab) DPAK T/R
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3.2
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200