INFINEON TECHNOLOGIES AG IGC82T170S8RMX1SA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IGC82T170S8RMX1SA1

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 1700V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.2 V
Polarity/Channel Type
N-Channel
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-40 Cel
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.4 V
Collector-emitter Voltage-Max
1700 V