INFINEON TECHNOLOGIES AG IGC36T120T8LX1SA3 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IGC36T120T8LX1SA3

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
2.07
Polarity/Channel Type
N-Channel
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.3
Collector-emitter Voltage-Max (V)
1200