IGC15T60QX1SA1
INFINEON TECHNOLOGIES AG
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 600V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.32 V
- Polarity/Channel TypeN-Channel
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-40 Cel
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5.6 V
- Collector-emitter Voltage-Max600 V
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IGC15T60QX1SA1