IGC10T65QE
INFINEON TECHNOLOGIES AG
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 650V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)2.32
- Polarity/Channel TypeN-Channel
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)5.6
- Collector-emitter Voltage-Max (V)650
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IGC10T65QE