INFINEON TECHNOLOGIES AG IFS150B12N3E4PB11BPSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IFS150B12N3E4PB11BPSA1

生命周期状态
Contact Mfr
说明
MIPAQ base Modul with Trench/Feild stopp IGBT4 and Ewithter Controlled Diode and Press FIT/bereits aufgetragenem ThermalInter face Material MIPAQ basemod
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X41
Configuration
Full Bridge
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.1
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
41
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
750
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
240
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
640
Collector Current-Max (IC) (A)
220
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.35
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED